| Autor: |
Ansari, Lida, Feldman, Baruch, Fagas, Giorgos, Lacambra, Carlos Martinez, Haverty, Michael G., Kuhn, Kelin J., Shankar, Sadasivan, Greer, James C. |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
IEEE Trans. Nanotechnol., 12, 1075, Nov. 2013 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1109/TNANO.2013.2279424 |
| Popis: |
Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive geometries. In this paper, we explore a similar architecture for aggressively scaled devices with the channel consisting of doped carbon nanotubes (CNTs). Gate all around (GAA) field effect transistor (FET) structures are investigated for n- and p-type doping. Current-voltage characteristics and sub-threshold characteristics for a CNTbased junctionless FET is compared with a junctionless silicon nanowire (SiNW) FET with comparable dimensions. Despite the higher on-current of the CNT channels, the device characteristics are poorer compared to the silicon devices due to the smaller CNT band gap. |
| Databáze: |
arXiv |
| Externí odkaz: |
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