Charge carrier dynamics in bulk MoS2 crystal studied by transient absorption microscopy

Autor:	Kumar, Nardeep, He, Jiaqi, He, Dawei, Wang, Yongsheng, Zhao, Hui
Rok vydání:	2013
Předmět:	Condensed Matter - Materials Science
Zdroj:	J. Appl. Phys. 113, 133702 (2013)
Druh dokumentu:	Working Paper
DOI:	10.1063/1.4799110
Popis:	We report a transient absorption microscopy study of charge carrier dynamics in bulk MoS2 crystals at room temperature. Charge carriers are injected by interband absorption of a 555-nm pulse, and probed by measuring differential reflection of a time-delayed and spatially scanned 660-nm pulse. We find an intervalley transfer time of about 0.35 ps, an energy relaxation time of hot carriers on the order of 50 ps, and a carrier lifetime of 180 ps. By monitoring the spatiotemporal dynamics of carriers, we obtained a diffusion coefficient of thermalized electrons of 4.2 cm2/s, corresponding to a mobility of 170 cm2/Vs. We also observed a time-varying diffusion coefficient of hot carriers. Comment: 6 pages, 4 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1303.0749 Zobrazit plný text záznamu View this record from Arxiv