Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions

Autor:	Kechiantz, A., Afanasev, A., Lazzari, J. -L.
Rok vydání:	2013
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
DOI:	10.1117/12.2002455
Popis:	We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAs absorber with built-in GaSb type-II quantum dots (QDs) [a gradual AlxGa1-xAs absorber with built-in AlyGa1-ySb QDs (0Comment: 7 pages, 4 figures; Contributed paper to SPIE Photonics West, San Francisco, CA, USA, February 2-7, 2013
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1302.4026 Zobrazit plný text záznamu View this record from Arxiv