Monolithic growth of ultra-thin Ge nanowires on Si(001)
| Autor: | Zhang, Jianjun, Katsaros, Georgios, Montalenti, Francesco, Scopece, Daniele, Rezaev, Roman O., Mickel, Christine, Rellinghaus, Bernd, Miglio, Leo, De Franceschi, Silvano, Rastelli, Armando, Schmidt, Oliver G. |
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| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | Phys. Rev. Lett. 109, 085502 (2012) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevLett.109.085502 |
| Popis: | Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, first transistor-type devices made from single wires show low-resistive electrical contacts and single hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics. Comment: 23 pages, 5 figures |
| Databáze: | arXiv |
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