Interaction-induced enhancement of $g$-factor in graphene
| Autor: | Volkov, A. V., Shylau, A. A., Zozoulenko, I. V. |
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| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | Phys. Rev. B 86, 155440 (2012) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.86.155440 |
| Popis: | We study the effect of electron interaction on the spin-splitting and the $g$-factor in graphene in perpendicular magnetic field using the Hartree and Hubbard approximations within the Thomas-Fermi model. We found that the $g$-factor is enhanced in comparison to its free electron value $g=2$ and oscillates as a function of the filling factor $\nu $ in the range $2\leq g^{\ast}\lesssim 4$ reaching maxima at even $\nu $ and minima at odd $\nu $. We outline the role of charged impurities in the substrate, which are shown to suppress the oscillations of the $g^{\ast}$-factor. This effect becomes especially pronounced with the increase of the impurity concentration, when the effective $g$-factor becomes independent of the filling factor reaching a value of $g^{\ast}\approx 2.3$. A relation to the recent experiment is discussed. Comment: 7 pages, 6 figures |
| Databáze: | arXiv |
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