| Autor: |
Ganster, Patrick, Saúl, Andrès, Tréglia, Guy |
| Rok vydání: |
2012 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
Oxidization of a dilute Si(Ge) alloy is modeled using an original protocol based on molecular dynamics simulation and rules for the oxygen insertions. These rules, deduced from ab-initio calculations, favor the formation of SiO_2 against GeO_2 oxide which leads to segregation of Ge atoms into the alloy during the oxidization front advance. Ge condensation is then observed close to the SiO_2/Ge interface due to the strain induced by oxydization in this region. From the analysis of the simulation process, we propose a one-dimensional description of Ge condensation wich perfectly reproduces the evolution of the Ge concentration during oxidization of the SiGe alloy. |
| Databáze: |
arXiv |
| Externí odkaz: |
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