Dynamics of Charge Flow in the Channel of a Thin-Film Field-Effect Transistor

Autor:	Bittle, E. G., Brill, J. W., Straley, J. P.
Rok vydání:	2012
Předmět:	Condensed Matter - Materials Science Condensed Matter - Other Condensed Matter
Druh dokumentu:	Working Paper
DOI:	10.1063/1.4764896
Popis:	The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of "zero applied current": zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming constant mobility and negligible contact impedances. An approximate expression for the frequency dependence of the induced charge in the center of the channel can be conveniently used to determine the charge mobility. Fits of electro-optic measurements of the induced charge in organic transistors are used as examples. Comment: 9 pages including table + 3 figures; submitted to Jnl. Appl. Phys
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1205.0214 Zobrazit plný text záznamu View this record from Arxiv