Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites
| Autor: | Plecenik, T., Tomasek, M., Belogolovskii, M., Truchly, M., Gregor, M., Noskovic, J., Zahoran, M., Roch, T., Boylo, I., Spankova, M., Chromik, S., Kus, P., Plecenik, A. |
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| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | J. Appl. Phys. 111, 056106 (2012) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.3691598 |
| Popis: | Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed. Comment: The final version was published in Journal of Applied Physics (2012) |
| Databáze: | arXiv |
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