| Autor: |
Zhu, Li Qiang, Wu, Guo Dong, Zhang, Hong Liang, Zhou, Ju Mei, Wan, Qing |
| Rok vydání: |
2012 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
A simple laser scribing process has been developed to fabricate low-voltage junctionless in-plane-gate thin-film transistors (TFTs) arrays without any mask and photolithography. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same indium-tin-oxide films without any intentional source/drain junction deposition process. Effective field-effect modulation of the drain current has been realized on such in-plane-gate device with a field-effect mobility of ~12.6cm2/Vs. At last, AND gate logic function was demonstrated on dual in-plane-gate device. |
| Databáze: |
arXiv |
| Externí odkaz: |
|
