| Autor: |
Mazzeo, G., Prati, E., Belli, M., Leti, G., Cocco, S., Fanciulli, M., Guagliardo, F., Ferrari, G. |
| Rok vydání: |
2012 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/1.4721433 |
| Popis: |
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magnetic field independent tunneling time is measured. We measure the statistics of the transfer of electrons observed when the ground state D0 of the donor is aligned with the SET states. |
| Databáze: |
arXiv |
| Externí odkaz: |
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