Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures
| Autor: | Weber, Dieter, Poppe, Ulrich |
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| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | J. Appl. Phys. 111, 056101 (2012) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.3691599 |
| Popis: | Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La_{2}CuO_{4} and SrTiO_{3} layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form {\Delta}G/G = CI^A t^B. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength. Comment: Communication |
| Databáze: | arXiv |
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