| Autor: |
Choi, Woo Seok, Chisholm, Matthew F., Singh, David J., Choi, Taekjib, Jellison Jr, Gerald E., Lee, Ho Nyung |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Nature Communications 3, 689 (2012) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1038/ncomms1690 |
| Popis: |
Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the band gap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the band gap in complex oxides for use in emerging oxide opto-electronic and energy applications. |
| Databáze: |
arXiv |
| Externí odkaz: |
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