| Autor: |
Roche, Benoît, Voisin, Benoit, Jehl, Xavier, Wacquez, Romain, Sanquer, Marc, Vinet, Maud, Deshpande, Veeresh, Previtali, Bernard |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Appl. Phys. Lett. 100, 032107 (2012) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/1.3678042 |
| Popis: |
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel. |
| Databáze: |
arXiv |
| Externí odkaz: |
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