Gate tunable non-linear currents in bilayer graphene diodes

Autor:	Shioya, Hiroki, Yamamoto, Michihisa, Russo, Saverio, Craciun, Monica F., Tarucha, Seigo
Rok vydání:	2012
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
DOI:	10.1063/1.3676441
Popis:	Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and single-gated region. These bilayer graphene pn diodes are characterized by non-linear currents and directional current rectification, and we show the rectified direction of the source-drain voltage can be controlled by using gate voltages. A systematic study of the pn junction characteristics allows to extract a gate-dependent bandgap value which ranges from 0 meV to 130 meV. Comment: 4 pages
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1201.1105 Zobrazit plný text záznamu View this record from Arxiv