| Autor: |
Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Katsnelson, M. I., Eaves, L., Morozov, S. V., Peres, N. M. R., Leist, J., Geim, A. K., Novoselov, K. S., Ponomarenko, L. A. |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
Science 335 (6071) 947-950 (2012) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1126/science.1218461 |
| Popis: |
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration. |
| Databáze: |
arXiv |
| Externí odkaz: |
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