Semiconducting graphene nanomeshes
| Autor: | Naumov, I. I., Bratkovsky, A. M. |
|---|---|
| Rok vydání: | 2011 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Symmetry arguments are used to describe all possible two-dimensional periodic corrugations of graphene ("nanomeshes") capable of inducing tangible semiconducting gap. Such nanomeshes or superlattices break the initial graphene translational symmetry in a way that produces mixing and subsequent splitting of the Dirac K and K' states. All of them have hexagonal Bravais lattice and are described by space groups that are subgroups of the graphene group. The first-principles calculations show that the gaps of about 0.5 eV can be induced at strains safely smaller than the graphene failure strain. Comment: 5 pages, 4 figures |
| Databáze: | arXiv |
| Externí odkaz: |
|