Mechanical cleaning of graphene
| Autor: | Goossens, A. M., Calado, V. E., Barreiro, A., Watanabe, K., Taniguchi, T., Vandersypen, L. M. K. |
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| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | Appl. Phys. Lett. 100, 073110 (2012) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.3685504 |
| Popis: | Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces charge carrier mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode AFM removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hBN dielectrics exhibited a mobility of ~36,000 cm2/Vs at low temperature. Comment: 4 pages, 4 figures |
| Databáze: | arXiv |
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