New mechanism for generating spin transfer torque without charge current
| Autor: | Autès, G., Mathon, J., Umerski, A. |
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| Rok vydání: | 2011 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.3689745 |
| Popis: | A new physical mechanism for generating spin-transfer torque is proposed. It is due to interference of bias driven nonequilibrium electrons incident on a switching junction with the electrons reflected from an insulating barrier inserted in the junction after the switching magnet. It is shown using the rigorous Keldysh formalism that this new out-of-plane torque $T_{\perp}$ is proportional to an applied bias and is as large as the torque in a conventional junction generated by a strong charge current. However, the charge current and the in-plane torque $T_{\parallel}$ are almost completely suppressed by the insulating barrier. This new junction thus offers the highly applicable possibility of bias-induced switching of magnetization without charge current. Comment: 10 pages, 3 figures |
| Databáze: | arXiv |
| Externí odkaz: |
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