Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot
| Autor: | Prance, J. R., Shi, Zhan, Simmons, C. B., Savage, D. E., Lagally, M. G., Schreiber, L. R., Vandersypen, L. M. K., Friesen, Mark, Joynt, Robert, Coppersmith, S. N., Eriksson, M. A. |
|---|---|
| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | Phys. Rev. Lett. 108, 046808 (2012) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevLett.108.046808 |
| Popis: | We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T. Comment: 4 pages, 3 figures, supplemental information. Typos fixed; updated to submitted version |
| Databáze: | arXiv |
| Externí odkaz: |
|