| Autor: |
Glinka, Y. D., Tolk, N. H., Furdyna, J. K. |
| Rok vydání: |
2011 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevB.84.153304 |
| Popis: |
The transient second harmonic generation and linear optical reflectivity signals measured simultaneously in reflection from GaAs/GaSb/InAs and GaAs/GaSb heterostructures revealed a new mechanism for creating self-induced transparency in narrow bandgap semiconductors at low temperatures, which is based on the dual-frequency electro-optic soliton propagation. This allows the ultrafast carrier dynamics at buried semiconductor heterointerfaces to be studied. |
| Databáze: |
arXiv |
| Externí odkaz: |
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