| Autor: |
Tang, Xiaohui, Reckinger, Nicolas, Bayot, Vincent, Krzeminski, Christophe, Dubois, Emmanuel, Villaret, Alexandre, Bensahel, Daniel |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
IEEE Transaction on Nanotechnology 5, 6 (2006) p. 649 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1109/TNANO.2006.883481 |
| Popis: |
Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application. |
| Databáze: |
arXiv |
| Externí odkaz: |
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