Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)-(R7$\times$R3)-In

Autor:	Uchihashi, Takashi, Mishra, Puneet, Aono, Masakazu, Nakayama, Tomonobu
Rok vydání:	2011
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevLett.107.207001
Popis:	Macroscopic and robust supercurrents are observed by direct electron transport measurements on a silicon surface reconstruction with In adatoms (Si(111)-(R7xR3)-In). The superconducting transition manifests itself as an emergence of the zero resistance state below 2.8 K. $I-V$ characteristics exhibit sharp and hysteretic switching between superconducting and normal states with well-defined critical and retrapping currents. The two-dimensional (2D) critical current density $J_\mathrm{2D,c}$ is estimated to be as high as $1.8 \ \mathrm{A/m}$ at 1.8 K. The temperature dependence of $J_\mathrm{2D,c}$ indicates that the surface atomic steps play the role of strongly coupled Josephson junctions. Comment: 4 pages, 3 figures; The error in the values of 2D critical current density $J_\mathrm{2D,c}$ was corrected. In the old version, the numbers were wrong by a factor of 100 due to a mechanical error. This does not affect the following analysis and conclusion
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1107.3902 Zobrazit plný text záznamu View this record from Arxiv