Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
| Autor: | Borselli, Matthew G., Eng, Kevin, Croke, Edward T., Maune, Brett M., Huang, Biqin, Ross, Richard S., Kiselev, Andrey A., Deelman, Peter W., Alvarado-Rodriguez, Ivan, Schmitz, Adele E., Sokolich, Marko, Holabird, Kevin S., Hazard, Thomas M., Gyure, Mark F., Hunter, Andrew T. |
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| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | Appl. Phys. Lett. 99, 063109 (2011) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.3623479 |
| Popis: | We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si. Comment: 4 pages, 4 figures |
| Databáze: | arXiv |
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