Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization

Autor:	Yuryev, V. A., Kalinushkin, V. P., Zayats, A. V., Repeyev, Yu. A., Fedoseyev, V. G.
Rok vydání:	2011
Předmět:	Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Physics - Optics
Zdroj:	Inst. Phys. Conf. Ser. No. 149 (1996) 263-268
Druh dokumentu:	Working Paper
Popis:	The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close but some greater than the excitonic absorption resonances (so-called "bulk" photoexcitation). Only the excitonic and band-edge luminescence is seen under the interband excitation, while under the "bulk" excitation, the spectra are much more informative. The interband excited spectra of all the samples investigated in the present work are practically identical, whereas the bulk excited PL spectra are different for different samples and excitation depths and provide the information on the deep-level point defect composition of the bulk materials. Comment: DRIP-VI, 1995
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1106.0753 Zobrazit plný text záznamu View this record from Arxiv