Autor: |
Janssen, T. J. B. M., Fletcher, N. E., Goebel, R., Williams, J. M., Tzalenchuk, A., Yakimova, R., Kubatkin, S., Lara-Avila, S., Falko, V. I. |
Rok vydání: |
2011 |
Předmět: |
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Zdroj: |
New Journal of Physics, 13 (2011) 093026 |
Druh dokumentu: |
Working Paper |
DOI: |
10.1088/1367-2630/13/9/093026 |
Popis: |
The Syst\`eme Internationale d'unit\'es (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial graphene with that in GaAs/AlGaAs heterostructures. We find no difference of the quantized resistance value within the relative standard uncertainty of our measurement of 8.6\times10-11, being the most stringent test of the universality of the quantum Hall effect in terms of material independence. |
Databáze: |
arXiv |
Externí odkaz: |
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