| Autor: |
Plotnichenko, V. G., Nazaryants, V. O., Kryukova, E. B., Koltashev, V. V., Sokolov, V. O., Dianov, E. M., Gusev, A. V., Gavva, V. A., Kotereva, T. V., Churbanov, M. F. |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
Applied Optics, Vol. 50, Issue 23, pp. 4633-4641 (2011) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1364/AO.50.004633 |
| Popis: |
Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of $2 \times 10^{-5} ... 1 \times 10^{-4}$. The oxygen and carbon concentrations in all crystals are within $5 \times 10^{15}$ cm$^{-3}$ and the content of metal impurities is $10^{-5} ... 10^{-6}$ at.%. The peculiar changes of the refractive index in the phonon absorption region of all silicon single crystals are shown. The coefficients of generalized Cauchy dispersion function approximating the experimental refractive index values all over the measuring range are given. The transmission and Raman spectra are also studied. |
| Databáze: |
arXiv |
| Externí odkaz: |
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