Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)
| Autor: | Deretzis, I., La Magna, A. |
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| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | Appl. Phys. Lett. 98, 023113 (2011) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.3543847 |
| Popis: | We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show that, in contrast with Si-face epitaxial films, the first graphene layer that forms on the C-face of SiC is purely metallic with its $\pi$-bands partially preserved. Typical free-standing characteristics are fully recovered with a second graphene layer. We moreover discuss on the magnetic properties of the interface and the absence of Fermi-level pinning effects that could allow for a plausible device operation starting from the off-state. Comment: 4 pages, 4 figures |
| Databáze: | arXiv |
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