Strain balanced quantum posts
| Autor: | Alonso-Álvarez, D., Alén, B., Ripalda, J. M., Llorens, J., Taboada, A. G., Briones, F., Roldán, M. A., Hernández-Saz, J., Hernández-Maldonado, D., Herrera, M., Molina, S. I. |
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| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | Appl. Phys. Lett. 98, 173106 (2011) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.3583455 |
| Popis: | Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy. Comment: Submitted to Applied Physics Letters (7th March 2011). 4 pages, 4 figures |
| Databáze: | arXiv |
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