| Autor: |
Shi, Wei, Faraji, Behnam, Greenberg, Mark, Berggren, Jesper, Xiang, Yu, Hammar, Mattias, Lestrade, Michel, Li, Zhi-Qiang, Li, Z. M. Simon, Chrostowski, Lukas |
| Rok vydání: |
2011 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1007/s11082-011-9444-0 |
| Popis: |
A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps. |
| Databáze: |
arXiv |
| Externí odkaz: |
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