| Autor: |
Ketterer, Bernt, Heiss, Martin, Livrozet, Marie J., Reiger, Elisabeth, Morral, Anna Fontcuberta i |
| Rok vydání: |
2011 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevB.83.125307 |
| Popis: |
GaAs nanowires with a 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of GaAs wurtzite below 1.523 eV. |
| Databáze: |
arXiv |
| Externí odkaz: |
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