UV anti-reflection coatings for use in silicon detector design
| Autor: | Hamden, Erika T., Greer, Frank, Hoenk, Michael E., Blacksberg, Jordana, Dickie, Matthew R., Nikzad, Shouleh, Martin, Christopher D., Schiminovich, David |
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| Rok vydání: | 2011 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1364/AO.50.004180 |
| Popis: | We report on the development of coatings for a CCD detector optimized for use in a fixed dispersion UV spectrograph. Due to the rapidly changing index of refraction of Si, single layer broadband anti-reflection coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a CCD detector with theoretical quantum efficiencies (QE) of greater than 60% at wavelengths from 120 to 300nm. This high efficiency may be reached by coating a backside illuminated, thinned, delta-doped CCD with a series of thin film anti-reflection coatings. The materials tested include MgF2 (optimized for highest performance from 120-150nm), SiO2 (150-180nm), Al2O3(180-240nm), MgO (200-250nm), and HfO2 (240-300nm). A variety of deposition techniques were tested and a selection of coatings which minimized reflectance on a Si test wafer were applied to live devices. We also discuss future uses and improvements, including graded and multi-layer coatings. Comment: 8 pages, 15 Figures. The following article has been submitted to Applied Optics. After it is published, it will be found at http://www.opticsinfobase.org/ao/upcoming.cfm |
| Databáze: | arXiv |
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