Autor: |
Muhonen, J. T., Prest, M. J., Prunnila, M., Gunnarsson, D., Shah, V. A., Dobbie, A., Myronov, M., Morris, R. J. H., Whall, T. E., Parker, E. H. C., Leadley, D. R. |
Rok vydání: |
2011 |
Předmět: |
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Zdroj: |
Appl. Phys. Lett. 98, 182103 (2011) |
Druh dokumentu: |
Working Paper |
DOI: |
10.1063/1.3579524 |
Popis: |
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample. |
Databáze: |
arXiv |
Externí odkaz: |
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