| Autor: |
Tillier, Jérémy, Bourgault, Daniel, Pairis, Sébastien, Ortega, Luc, Caillault, Nathalie, Carbone, Laurent |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
Physics Procedia 10 (2010) 168 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1016/j.phpro.2010.11.094 |
| Popis: |
In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing Magnetic-Induced Rearrangement (MIR) of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni-Mn-Ga epitaxial films. A batch of epitaxial Ni-Mn-Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target and a pure manganese target has been studied. The co-sputtering process allows a precise control of the film compositions and enables keeping the epitaxial growth of Ni-Mn-Ga austenite during deposition at high temperature. It gives rise to tune the content of the MIR-active 14-modulated martensite in the film at room temperature, as well as micro and macro-twinned domains sizes. |
| Databáze: |
arXiv |
| Externí odkaz: |
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