Prospects for Doppler cooling of three-electronic-level molecules
| Autor: | Nguyen, J. H. V., Odom, B. |
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| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | Phys. Rev. A 83, 053404 (2011) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevA.83.053404 |
| Popis: | Analogous to the extension of laser cooling techniques from two-level to three-level atoms, Doppler cooling of molecules with an intermediate electronic state is considered. In particular, we use a rate-equation approach to simulate cooling of SiO+, in which population buildup in the intermediate state is prevented by its short lifetime. We determine that Doppler cooling of SiO+ can be accomplished without optically repumping from the intermediate state, at the cost of causing undesirable parity flips and rotational diffusion. Since the necessary repumping would require a large number of continuous-wave lasers, optical pulse shaping of a femtosecond laser is proposed as an attractive alternative. Other candidate three-electron-level molecules are also discussed. Comment: 7 pages, 7 figures |
| Databáze: | arXiv |
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