Structural origin of gap states in semicrystalline polymers and the implications for charge transport
Autor: | Rivnay, Jonathan, Noriega, Rodrigo, Northrup, John E., Kline, R. Joseph, Toney, Michael F., Salleo, Alberto |
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Rok vydání: | 2010 |
Předmět: | |
Druh dokumentu: | Working Paper |
DOI: | 10.1103/PhysRevB.83.121306 |
Popis: | We quantify the degree of disorder in the {\pi}-{\pi} stacking direction of crystallites of a high performing semicrystalline semiconducting polymer with advanced X-ray lineshape analysis. Using first principles calculations, we obtain the density of states of a system of {\pi}-{\pi} stacked polymer chains with increasing amounts of paracrystalline disorder. We find that for an aligned film of PBTTT the paracrystalline disorder is 7.3%. This type of disorder induces a tail of trap states with a breadth of ~100 meV as determined through calculation. This finding agrees with previous device modeling and provides physical justification for the mobility edge model. Comment: Text and figures are unchanged in the new version of the file. The only modification is the addition of a funding source to the acknowledgments |
Databáze: | arXiv |
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