Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

Autor:	Deora, Shweta, Paul, Abhijeet, Bijesh, R., Huang, Jeff, Klimeck, Gerhard, Bersuker, Gennadi, Krisch, P. D., Jammy, Raj
Rok vydání:	2010
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1109/LED.2010.2099101
Popis:	In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility ({\mu}h) in the transport direction and alleviates charge flow towards the gate oxide. {\mu}h enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the Si hole universal mobility. A ~40% reduction in NBTI degradation, gate leakage and flicker noise (1/f) is observed which is attributed to a 4% increase in the hole-oxide barrier height ({\phi}) in SiGe. Similar field acceleration factor ({\Gamma}) for threshold voltage shift ({\Delta}VT) and increase in noise ({\Delta}SVG) in Si and SiGe suggests identical degradation mechanisms. Comment: 4 figures, 3 pages, accepted for publication in IEEE EDL
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1012.1579 Zobrazit plný text záznamu View this record from Arxiv