Gate-controlled weak antilocalization effect in inversion layer on p-type HgCdTe

Autor:	Yang, Rui, Yu, Guolin, Liu, Xinzhi, Lin, Tie, Guo, Shaoling, Dai, Ning, Chu, Junhao, Wei, Yanfeng, Yang, Jianrong, He, Li
Rok vydání:	2010
Předmět:	Condensed Matter - Disordered Systems and Neural Networks Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
Popis:	We discover weak antilocalization effect of two-dimensional electron gas with one electric subband occupied in the inversion layer on p-type HgCdTe crystal. By fitting the model of Iordanskii, Lyanda-Geller and Pikus to data at varies temperatures and gate voltages, we extract phase coherence and spin-orbit scattering times as functions of temperature and carrier density. We find that Elliot-Yafet mechanism and Nyquist mechanism are the dominating spin decoherence and dephasing mechanisms, respectively. We also find that the Rashba parameter is relatively large and the dependence of Rashba parameter upon carrier density is not monotonic and an optimal carrier density exists for the maximization of spin-orbit coupling. Comment: preview edition;submit to PRB
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1010.3464 Zobrazit plný text záznamu View this record from Arxiv