Quantum Hall activation gaps in bilayer graphene
Autor: | Kurganova, E. V., Giesbers, A. J. M., Gorbachev, R. V., Geim, A. K., Novoselov, K. S., Maan, J. C., Zeitler, U. |
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Rok vydání: | 2010 |
Předmět: | |
Zdroj: | Solid State Communications 150, 2209-2211 (2010) |
Druh dokumentu: | Working Paper |
DOI: | 10.1016/j.ssc.2010.09.042 |
Popis: | We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $\nu=\pm4$ and $\nu=\pm8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magnetic field. Comment: 4 pages, accepted version (just removed a few typos), will appear as Fast Track Communication in Solid State Commun |
Databáze: | arXiv |
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