Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure

Autor:	Wild, A., Sailer, J., Nützel, J., Abstreiter, G., Ludwig, S., Bougeard, D.
Rok vydání:	2010
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science Quantum Physics
Druh dokumentu:	Working Paper
DOI:	10.1088/1367-2630/12/11/113019
Popis:	We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing. Comment: 20 pages, 8 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1007.2404 Zobrazit plný text záznamu View this record from Arxiv