A Local Mott Transition in NiO Resistance Random Access Memory

Autor:	Xue, Kan-Hao, de Araujo, Carlos A. Paz, Celinska, Jolanta, McWilliams, Christopher
Rok vydání:	2010
Předmět:	Condensed Matter - Strongly Correlated Electrons Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
Popis:	The physics of the Mott transition in the anodic region of NiO Resistance Random Access Memory (RRAM) is discussed from the Hubbard model. The Hubbard approximation is examined in details and it is shown that the Wannier functions in the definition of Hubbard U should not be replaced by atomic s-functions when it comes to the metallic side of the transition. The corresponding effective Hubbard U is subject to variations, which may also be understood by introducing an effective permittivity of the solid as an ansatz. Furthermore, the transition could be demonstrated in the Brinkman-Rice picture. Finally, the anodic characteristics of such transition show that it is a local Mott transition. Therefore, the unipolar switching NiO RRAM can still have asymmetric I-V curves when a capping layer is inserted, which is explained qualitatively by quantum mechanics. Comment: 11 Pages, 5 Figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1006.5759 Zobrazit plný text záznamu View this record from Arxiv