Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

Autor:	Bauer, Benedikt, Rudolph, Andreas, Soda, Marcello, Morral, Anna Fontcuberta i, Zweck, Josef, Schuh, Dieter, Reiger, Elisabeth
Rok vydání:	2010
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	Nanotechnology 21 (2010) 435601
Druh dokumentu:	Working Paper
DOI:	10.1088/0957-4484/21/43/435601
Popis:	GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 \mum. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth. Comment: 9 pages, 4 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1006.4060 Zobrazit plný text záznamu View this record from Arxiv