Anomalous Raman features of silicon nanowires under high pressure

Autor:	Bhattacharyya, Somnath, Churochkin, Dmitry, Erasmus, Rudolph M
Rok vydání:	2010
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Disordered Systems and Neural Networks Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1063/1.3499297
Popis:	The potential of silicon nanowires (SiNWs), (diameter < 10 nm) to transform into rigid bundle-like structures with distinct phonon confinement under high pressure (<= 15 GPa), instead of amorphising as per previous reports, is demonstrated using in-situ Raman spectroscopy. The newly observed splitting of the second order transverse optical (2TO) Raman mode into 2TO(L) and 2TO(W) phonon modes at >= 5 GPa establishes a highly anisotropic and mode-dependent pressure response of these SiNWs. Properties of the novel structures are superior compared to other nano-structured silicon and bulk-Si in terms of increased linear modulus, more localized phonon confinement and less anharmonicity. Comment: 13 pages, 3 figures, submitted to APL
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1006.0442 Zobrazit plný text záznamu View this record from Arxiv