Boron nitride substrates for high-quality graphene electronics
| Autor: | Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., Hone, J. |
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| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | Nature Nanotechnology 5, 722-726 (2010) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1038/nnano.2010.172 |
| Popis: | Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres. Comment: 20 pages (includes supplementary info), 7 figures |
| Databáze: | arXiv |
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