Nanostructures in p-GaAs with improved tunability
| Autor: | Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., Wieck, A. D. |
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| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | Applied Physics Letters 97, 022110 (2010) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.3463465 |
| Popis: | A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy. Comment: 4 pages, 4 figures |
| Databáze: | arXiv |
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