Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
| Autor: | Wang, K. Y., Edmonds, K. W., Irvine, A. C., Tatara, G., De Ranieri, E., Wunderlich, J., Olejnik, K., Rushforth, A. W., Campion, R. P., Williams, D. A., Foxon, C. T., Gallagher, B. L. |
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| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | APPLIED PHYSICS LETTERS 97, 262102 (2010) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.3532095 |
| Popis: | Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. Comment: 12 pages, 3 figures |
| Databáze: | arXiv |
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