Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions

Autor: Plecenik, A., Tomasek, M., Plecenik, T., Truchly, M., Noskovic, J., Zahoran, M., Roch, T., Belogolovskii, M., Spankova, M., Chromik, S., Kus, P.
Rok vydání: 2010
Předmět:
Zdroj: Applied Surface Science 256 (2010) 5684-5687
Druh dokumentu: Working Paper
DOI: 10.1016/j.apsusc.2010.03.018
Popis: Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.
Comment: To be published in Applied Surface Science.
Databáze: arXiv