Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions
Autor: | Plecenik, A., Tomasek, M., Plecenik, T., Truchly, M., Noskovic, J., Zahoran, M., Roch, T., Belogolovskii, M., Spankova, M., Chromik, S., Kus, P. |
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Rok vydání: | 2010 |
Předmět: | |
Zdroj: | Applied Surface Science 256 (2010) 5684-5687 |
Druh dokumentu: | Working Paper |
DOI: | 10.1016/j.apsusc.2010.03.018 |
Popis: | Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields. Comment: To be published in Applied Surface Science. |
Databáze: | arXiv |
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