Superconducting transition in Nb nanowires fabricated using focused ion beam
| Autor: | Tettamanzi, G. C., Pakes, C. I., Potenza, A., Rubanov, S., Marrows, C. H., Prawer, S. |
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| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | Nanotechnology 20 (2009) 465302 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1088/0957-4484/20/46/465302 |
| Popis: | Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below Tc. This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire. Comment: 13 pages, 3 images, 1 table |
| Databáze: | arXiv |
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