| Autor: |
Ansari, Lida, Feldman, Baruch, Fagas, Giorgos, Colinge, Jean-Pierre, Greer, James C. |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
Appl. Phys. Lett. 97, 062105 (2010) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/1.3478012 |
| Popis: |
Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless gated Si nanowire transistors. Our primary predictions are that Si-based transistors are physically possible without major changes in design philosophy at scales of ~1 nm wire diameter and ~3 nm gate length, and that the junctionless transistor may be the only physically sensible design at these length scales. We also present investigations into atomic-level design factors such as dopant positioning and concentration. |
| Databáze: |
arXiv |
| Externí odkaz: |
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