A Novel Route for the Inclusion of Metal Dopants in Silicon
Autor: | Gardener, Jules A., Liaw, Irving, Aeppli, Gabriel, Boyd, Ian W., Chater, Richard J., Jones, Tim S., McPhail, David S., Sankar, Gopinathan, Stoneham, A. Marshall, Sikora, Marcin, Thornton, Geoff, Heutz, Sandrine |
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Rok vydání: | 2010 |
Předmět: | |
Zdroj: | Nanotechnology 21 (2010) 035304 |
Druh dokumentu: | Working Paper |
DOI: | 10.1088/0957-4484/21/2/025304 |
Popis: | We report a new method to introduce metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet (UV) light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS) show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays. Comment: 12 pages, 3 figures |
Databáze: | arXiv |
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