A Novel Route for the Inclusion of Metal Dopants in Silicon

Autor:	Gardener, Jules A., Liaw, Irving, Aeppli, Gabriel, Boyd, Ian W., Chater, Richard J., Jones, Tim S., McPhail, David S., Sankar, Gopinathan, Stoneham, A. Marshall, Sikora, Marcin, Thornton, Geoff, Heutz, Sandrine
Rok vydání:	2010
Předmět:	Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	Nanotechnology 21 (2010) 035304
Druh dokumentu:	Working Paper
DOI:	10.1088/0957-4484/21/2/025304
Popis:	We report a new method to introduce metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet (UV) light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS) show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays. Comment: 12 pages, 3 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1003.1755 Zobrazit plný text záznamu View this record from Arxiv