| Autor: |
Rossler, C., Feil, T., Mensch, P., Ihn, T., Ensslin, K., Schuh, D., Wegscheider, W. |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
New Journal of Physics 12 (2010) 043007 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1088/1367-2630/12/4/043007 |
| Popis: |
We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases. |
| Databáze: |
arXiv |
| Externí odkaz: |
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